FDS6299S - Fairchild Semiconductor

FDS6299S 30V N-Channel PowerTrench SyncFET

The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Applications • Synchronous .

Features

• 21 A, 30 V. RDS(ON) = 3.9 mΩ @ VGS = 10 V RDS(ON) = 5.1 mΩ @ VGS = 4.5 V
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• Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability 100% RG (Gate Resistance) tested Termination is Lead-free and RoHS Compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 21 105 2.5 1.2 1
  –55 .