This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 13 A, 40 V RDS(ON) = 10.5 mΩ @ VGS = 10 V • Hig.
• 13 A, 40 V RDS(ON) = 10.5 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching (Qg = 30 nC )
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
•
• Synchronous rectifier DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
40 ± 20
(Note 1a)
Units
V V A W °C
13 60 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS4080N7 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDS4070N3 |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDS4070N7 |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDS4072N3 |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDS4072N7 |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDS4141 |
Fairchild Semiconductor |
P-Channel MOSFET | |
7 | FDS4141_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
8 | FDS4410 |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDS4410A |
Fairchild Semiconductor |
Single N-Channel MOSFET | |
10 | FDS4435 |
Fairchild Semiconductor |
P-Channel MOSFET | |
11 | FDS4435A |
Fairchild Semiconductor |
P-Channel MOSFET | |
12 | FDS4435BZ |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET |