This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 12.4 A, 40 V RDS(ON) = 12 mΩ @ VGS = 4.5 V RDS(O.
• 12.4 A, 40 V RDS(ON) = 12 mΩ @ VGS = 4.5 V RDS(ON) = 10 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
• Synchronous rectifier
• DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
40 ± 12
(No.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS4072N7 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDS4070N3 |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDS4070N7 |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDS4080N3 |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDS4080N7 |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDS4141 |
Fairchild Semiconductor |
P-Channel MOSFET | |
7 | FDS4141_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
8 | FDS4410 |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDS4410A |
Fairchild Semiconductor |
Single N-Channel MOSFET | |
10 | FDS4435 |
Fairchild Semiconductor |
P-Channel MOSFET | |
11 | FDS4435A |
Fairchild Semiconductor |
P-Channel MOSFET | |
12 | FDS4435BZ |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET |