These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode. These devices are well s.
• RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Ultra FRFET
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TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode. These devices are well suited for high effici.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDP5N50 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDP5N50F |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDP5N50NZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDP5N60NZ |
Fairchild Semiconductor |
MOSFET | |
5 | FDP51N25 |
Fairchild Semiconductor |
N-Channel UniFET MOSFET | |
6 | FDP51N25 |
ON Semiconductor |
N-Channel MOSFET | |
7 | FDP52N20 |
ON Semiconductor |
N-Channel MOSFET | |
8 | FDP52N20 |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDP5500-F085 |
ON Semiconductor |
N-Channel UltraFET Power MOSFET | |
10 | FDP5500_F085 |
Fairchild Semiconductor |
N-Channel UltraFET Power MOSFET | |
11 | FDP55N06 |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | FDP5645 |
Fairchild Semiconductor |
60V N-Channel MOSFET |