FDP5645 - Fairchild Semiconductor

FDP5645 60V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at v.

Features

• 80 A, 60 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.011 Ω @ VGS = 6 V.
• Critical DC electrical parameters specified at elevated temperature.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low RDS(ON).
• 175°C maximum junction temperature rating. D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG TL Drain-Source Voltage Gate-Source Voltage Maximum Drain Current TA =25oC unless otherwise noted Paramete.