FDN86501LZ - ON Semiconductor

FDN86501LZ N-Channel MOSFET

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A • Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A • High Perfor.

Features

• Shielded Gate MOSFET Technology
• Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A
• Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A
• High Performance Trench Technology for Extremely Low rDS(on)
• High Power and Current Handling Capability in a Widely Used Surface Mount Package
• Fast Switching Speed
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and is RoHS Compliant Applications
• Primary DC−DC Switch
• Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous (No.