This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • Max rDS(on) = 1.1 mW at VGS = 10 V, ID = 43 A • Max .
• Max rDS(on) = 1.1 mW at VGS = 10 V, ID = 43 A
• Max rDS(on) = 1.3 mW at VGS = 8 V, ID = 37 A
• Advanced Package and Silicon Combination for Low rDS(on)
and High Efficiency
• Next Generation Enhanced Body Diode Technology,
Engineered for Soft Recovery
• Low Profile 8 x 8 mm MLP Package
• MSL1 Robust Package Design
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and RoHS Compliant
Applications
• OringFET / Load Switching
• Synchronous Rectification
• DC−DC Conversion
DATA SHEET www.onsemi.com
VDS 60 V
rDS(ON) MAX 1.1 mW @ 10 V 1.3 mW @ 8 V
ID MAX 292 A
Top
Bottom
TDFNW8 8.3x8.4,.
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A Advanced Package and S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMT800100DC |
Fairchild Semiconductor |
MOSFET | |
2 | FDMT800100DC |
ON Semiconductor |
N-Channel MOSFET | |
3 | FDMT800120DC |
Fairchild Semiconductor |
MOSFET | |
4 | FDMT800120DC |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDMT800150DC |
Fairchild Semiconductor |
MOSFET | |
6 | FDMT800150DC |
ON Semiconductor |
N-Channel MOSFET | |
7 | FDMT800152DC |
Fairchild Semiconductor |
MOSFET | |
8 | FDMT800152DC |
ON Semiconductor |
N-Channel MOSFET | |
9 | FDMT80080DC |
Fairchild Semiconductor |
MOSFET | |
10 | FDM-2B |
ETC |
FDM-2B | |
11 | FDM100-0045SP |
IXYS Corporation |
Buck Chopper | |
12 | FDM21-05QC |
IXYS Corporation |
Q-Class Power MOSFETs |