FDMT800152DC - Fairchild Semiconductor

FDMT800152DC MOSFET

„ Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ Low profile 8x8mm MLP package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanc.

Features

General Description „ Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ Low profile 8x8mm MLP package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Am.