Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convention.
General Description Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on). MSL1 robust package design 100% UIL tested RoHS Compliant Applications OringFET Synchronous Rectifier Top P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMS8050ET30 |
Fairchild Semiconductor |
MOSFET | |
2 | FDMS8018 |
Fairchild Semiconductor |
MOSFET | |
3 | FDMS8020 |
Fairchild Semiconductor |
MOSFET | |
4 | FDMS8023S |
Fairchild Semiconductor |
MOSFET | |
5 | FDMS8025S |
Fairchild Semiconductor |
MOSFET | |
6 | FDMS8026S |
Fairchild Semiconductor |
MOSFET | |
7 | FDMS8027S |
Fairchild Semiconductor |
MOSFET | |
8 | FDMS8090 |
Fairchild Semiconductor |
MOSFET | |
9 | FDMS8320L |
Fairchild Semiconductor |
MOSFET | |
10 | FDMS8320L |
ON Semiconductor |
N-Channel MOSFET | |
11 | FDMS8320LDC |
ON Semiconductor |
N-Channel MOSFET | |
12 | FDMS8320LDC |
Fairchild Semiconductor |
N-Channel Dual Cool Power Trench MOSFET |