FDMS8018 - Fairchild Semiconductor

FDMS8018 MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance. Applications „ VRM Vcore Swi.

Features

„ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A „ Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency „ Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery „ MSL1 Robust Package Design „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS.