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Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state r.
General Description Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Applications DC/DC Buck Converters Notebook battery power managemen.
FDMC7696 - ON Semiconductor
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minim.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMC7692 |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FDMC7692 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDMC7692S |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDMC7692S |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMC7660 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 6 | FDMC7660 |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FDMC7660DC |
Fairchild Semiconductor |
N-Channel Dual Cool 33 PowerTrenc MOSFET |
|
| 8 | FDMC7660DC |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FDMC7660S |
Fairchild Semiconductor |
N-Channel Power Trench SyncFET |
|
| 10 | FDMC7660S |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | FDMC7664 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FDMC7672 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|