FDMC7672 - Fairchild Semiconductor

FDMC7672 N-Channel Power Trench MOSFET

„ Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A „ Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state.

Features

General Description „ Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A „ Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Application „ DC - DC Buck Converters „ Notebook battery power mana.