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Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 6.25 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM p.
General Description Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 6.25 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications Synchronous Rectifier for DC/.
FDMC3020DC - ON Semiconductor
Features Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 6.25 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 9.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMC3300NZA |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDMC3612 |
Kexin |
N-Channel MOSFET |
|
| 3 | FDMC3612 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 4 | FDMC3612 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMC3612-L701 |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FDMC007N30D |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 7 | FDMC008N08C |
ON Semiconductor |
N-Channel MOSFET |
|
| 8 | FDMC010N08C |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FDMC0310AS |
Fairchild Semiconductor |
MOSFET |
|
| 10 | FDMC0310AS |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | FDMC0310AS-F127 |
ON Semiconductor |
N-Channel MOSFET |
|
| 12 | FDMC15N06 |
Fairchild Semiconductor |
N-Channel MOSFET |
|