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The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode. Features • Max rDS(on) = 4.4 mW at VGS = .
• Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A
• Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.5 A
• Advanced Package and Silicon Combination for Low rDS(on) and
High Efficiency
• SyncFET Schottky Body Diode
• MSL1 Robust Package Design
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Synchronous Rectifier for DC/DC Converters
• Notebook Vcore/GPU Low Side Switch
• Networking Point of Load Low Side Switch
• Telecom Secondary Side Rectification
DATA SHEET www.onsemi.com
VDS MAX 30 V
rDS(on) MAX 4.4 mW @ 10 V 5.2 mW @ 4.5 V
ID MAX 21 A
Pin 1 SSSG
DDDD
To.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMC0310AS |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMC0310AS |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDMC007N30D |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 4 | FDMC008N08C |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMC010N08C |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FDMC15N06 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 7 | FDMC15N06 |
ON Semiconductor |
N-Channel MOSFET |
|
| 8 | FDMC2512SDC |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 9 | FDMC2514SDC |
Fairchild Semiconductor |
N-Channel Dual Cool PowerTrench SyncFET |
|
| 10 | FDMC2514SDC |
VBsemi |
N-Channel MOSFET |
|
| 11 | FDMC2514SDC |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 12 | FDMC2523P |
Fairchild Semiconductor |
P-Channel QFET |
|