FDMC2D8N025S - ON Semiconductor

FDMC2D8N025S N-Channel MOSFET

„ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A „ High Performance Technology for Extremely Low rDS(on) „ SyncFETTM Schottky Body Diode „ 100% UIL Tested „ RoHS Compliant The FDMC2D8N025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologi.

Features

General Description „ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A „ High Performance Technology for Extremely Low rDS(on) „ SyncFETTM Schottky Body Diode „ 100% UIL Tested „ RoHS Compliant The FDMC2D8N025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode. Applications „ Synchronous Rectifier.