This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an eff.
Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has .
Features Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = .
FDMC2514SDC N-Channel 30 V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) 30 RDS(on) () Typ. 0.004 at VGS = 4..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMC2512SDC |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDMC2523P |
Fairchild Semiconductor |
P-Channel QFET | |
3 | FDMC2523P |
ON Semiconductor |
P-Channel MOSFET | |
4 | FDMC2610 |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET | |
5 | FDMC2610 |
ON Semiconductor |
N-Channel MOSFET | |
6 | FDMC2674 |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET | |
7 | FDMC2674 |
ON Semiconductor |
N-Channel MOSFET | |
8 | FDMC2D8N025S |
ON Semiconductor |
N-Channel MOSFET | |
9 | FDMC007N30D |
ON Semiconductor |
Dual N-Channel MOSFET | |
10 | FDMC008N08C |
ON Semiconductor |
N-Channel MOSFET | |
11 | FDMC010N08C |
ON Semiconductor |
N-Channel MOSFET | |
12 | FDMC0310AS |
Fairchild Semiconductor |
MOSFET |