FDM606P - Fairchild Semiconductor

FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features • Fast switching • rDS(ON) = 0.026Ω (Typ), VGS .

Features

• Fast switching
• rDS(ON) = 0.026Ω (Typ), VGS = -4.5V
• rDS(ON) = 0.033Ω (Typ), VGS = -2.5V
• rDS(ON) = 0.052Ω (Typ), VGS = -1.8V Applications
• Load switch
• Battery charge
• Battery disconnect circuits D Bottomview 3 X 2 (8 Lead) SinglePad ShortPin D G D D 1 2 8 7 6 5 1 D D D 3 4 S S MicroFET 3x2-8 MOSFET Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = - 4.5V) ID Continuous (TC = 100 C, VGS = - 2.5V) Continuous (TC = 100oC, VGS = -1.8V) Pulsed PD TJ, TSTG Power dissipa.