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FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82784 A.
• r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A
• Qg(tot) = 84nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82784
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
D
DRAIN (FLANGE)
SOURCE DRAIN GATE SOURCE GATE
DRAIN (FLANGE)
SOURCE DRAIN GATE
.
FDI3632 - VBsemi
FDI3632-VB FDI3632-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (.
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|---|---|---|---|---|
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Fairchild Semiconductor |
N-Channel MOSFET |
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| 2 | FDI33N25 |
Fairchild Semiconductor |
N-Channel MOSFET |
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| 3 | FDI025N06 |
Fairchild Semiconductor |
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| 4 | FDI030N06 |
Fairchild Semiconductor |
N-Channel MOSFET |
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| 5 | FDI036N10A |
INCHANGE |
N-Channel MOSFET |
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| 6 | FDI038AN06A0 |
Fairchild Semiconductor |
N-Channel MOSFET |
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| 7 | FDI038AN06A0 |
ON Semiconductor |
N-Channel MOSFET |
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| 8 | FDI040N06 |
Fairchild Semiconductor |
N-Channel MOSFET |
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| 9 | FDI045N10A |
ON Semiconductor |
N-Channel MOSFET |
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| 10 | FDI045N10A |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
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| 11 | FDI047AN08A0 |
Fairchild Semiconductor |
N-Channel MOSFET |
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| 12 | FDI047AN08A0 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|