FDI036N10A - INCHANGE

FDI036N10A N-Channel MOSFET

isc N-Channel MOSFET Transistor FDI036N10A ·FEATURES ·With TO-262 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATING.

Features

·With TO-262 packaging
·Drain Source Voltage- : VDSS ≥ 100V
·Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 164 A IDM Drain Current-Single Pulsed 656 A PD Total Dissipation 263 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage T.