FDH400 - ON Semiconductor

FDH400 High Voltage General Purpose Diode

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Features

• This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) (Notes 1 and 2) Symbol Parameter Value Unit WIV Working Inverse Voltage 150 V IO Average Rectified Forward Current 200 mA IF DC Forward Current 500 mA iF Recurrent Peak Forward Current 600 mA IFSM Non−Repetitive Pulse Width = 1.0 s 1.0 A Peak Forward Current Pulse Width = 1.0 ms 4.0 TSTG Storage Temperature Range −65 to +200 °C TJ Operating Junction Temperature 175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the .