FDH038AN08A1 - ON Semiconductor

FDH038AN08A1 N-Channel MOSFET

MOSFET – N-Channel, POWERTRENCH) 75 V, 80 A, 3.8 mW FDH038AN08A1 Features  RDS(ON) = 3.5 mW (Typ.), VGS = 10 V, ID = 80 A  Qg (tot) = 125 nC (Typ.), VGS = 10 V  Low Miller Charge  Low Qrr Body Diode  UIS Capability (Single Pulse and Repetitive Pulse)  This Device is Pb−Free and is RoHS Compliant Applications  Synchronous Rectification for ATX / Serve.

Features

 RDS(ON) = 3.5 mW (Typ.), VGS = 10 V, ID = 80 A
 Qg (tot) = 125 nC (Typ.), VGS = 10 V
 Low Miller Charge
 Low Qrr Body Diode
 UIS Capability (Single Pulse and Repetitive Pulse)
 This Device is Pb−Free and is RoHS Compliant Applications
 Synchronous Rectification for ATX / Server / Telecom PSU
 Battery Protection Circuit
 Motor Drives and Uninterruptible Power Supplies MOSFET MAXIMUM RATINGS (TC = 25C, Unless otherwise noted) Symbol Parameter Value Unit VDSS VGS ID ID EAS Drain to Source Voltage Gate to Source Voltage Drain Current − Continuous (TC < 158C, VGS = 10 V) (TA = 25.