FDG329N - Fairchild Semiconductor

FDG329N 20V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Features • 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5.

Features

• 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 115 mΩ @ VGS = 2.5 V
• Fast switching speed
• Low gate charge (3.3 nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability. Applications
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• DC/DC converter Power management Load switch S D D G Pin 1 1 2 D D 6 5 4 SC70-6 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ± 12 (Note 1a) Units V V A W °C 1.5 6 0.42 0.38 -55 to.