FDFMA2P857 - Fairchild Semiconductor

FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal perform.

Features

MOSFET: „ Max rDS(on) = 120mΩ at VGS =
  –4.5V, ID =
  –3.0A „ Max rDS(on) = 160mΩ at VGS =
  –2.5V, ID =
  –2.5A „ Max rDS(on) = 240mΩ at VGS =
  –1.8V, ID =
  –1.0A General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for it’s physical size and is well suited to linear mode ap.