FDFMA2P029Z-F106 - ON Semiconductor

FDFMA2P029Z-F106 P-Channel MOSFET

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra−portable applications. It features a MOSFET with very low on−state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The MicroFET t 2X2 package offers exceptional .

Features

a MOSFET with very low on−state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The MicroFET t 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features MOSFET
• Max rDS(on) = 95 mW at VGS =
  –4.5 V, ID =
  –3.1 A
• Max rDS(on) = 141 mW at VGS =
  –2.5 V, ID =
  –2.5 A
• HBM ESD Protection Level > 2.5 kV (Note 1) Schottky
• VF < 0.37 V @ 500 mA
• Low Profile − 0.8 mm Maximum − In the New Package MicroFET 2x2 mm
• These Devices are Pb−Free and are RoHS Compliant NO.