FDD8580 - Fairchild Semiconductor

FDD8580 N-Channel MOSFET

„ Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A „ Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V „ Low gate resistance „ 100% Avalanche tested „ RoHS compliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switchi.

Features

General Description „ Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A „ Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V „ Low gate resistance „ 100% Avalanche tested „ RoHS compliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D www.DataSheet4.