FDD8451 - Fairchild Semiconductor

FDD8451 N-Channel MOSFET

„ Max rDS(on) 24m: at VGS = 10V, ID = 9A „ Max rDS(on) 30m: at VGS = 4.5V, ID = 7A „ Low gate charge „ Fast Switching „ High performance trench technology for extremely low rDS(on) „ RoHS compliant AD FREE I This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventiona.

Features

General Description „ Max rDS(on) 24m: at VGS = 10V, ID = 9A „ Max rDS(on) 30m: at VGS = 4.5V, ID = 7A „ Low gate charge „ Fast Switching „ High performance trench technology for extremely low rDS(on) „ RoHS compliant AD FREE I This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on). Application „ DC/DC converter „ Backlight inverter LE D G MOSFET Maximum Ratings TC = 25°C unle.