FDD6770A - Fairchild Semiconductor

FDD6770A N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 24 A „ Max rDS(on) = 8.0 mΩ at VGS = 4.5 V, ID = 18.4 A „ 10.

Features

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 24 A „ Max rDS(on) = 8.0 mΩ at VGS = 4.5 V, ID = 18.4 A „ 100% UIL tested „ RoHS Compliant Applications „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D D G G S D-PAK TO -252 (TO-252) S MOSFET Maximum Ratings TC = 25 °C unless other.