FDD2572 / FDU2572 FDD2572 / FDU2572 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) July 2014 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures a.
• rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A
• Qg(tot) = 26nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
July 2014
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
Formerly developmental type 82860
GATE
DRAIN (FLANGE)
DRAIN (FLANGE)
SOURCE DRAIN
GATE
SOURCE
TO-252AA
FDD SERIES
TO-251AA
FDU SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD TJ, TSTG
Parameter
D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDD2570 |
Fairchild Semiconductor |
150V N-Channel PowerTrench MOSFET | |
2 | FDD25 |
Chinfa Electronics Ind |
DC-DC CONVERTER | |
3 | FDD2512 |
Fairchild Semiconductor |
150V N-Channel PowerTrench MOSFET | |
4 | FDD2582 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDD2582 |
Fairchild Semiconductor |
MOSFET | |
6 | FDD20AN06A0 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDD24AN06LA0 |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDD2612 |
Fairchild Semiconductor |
200V N-Channel PowerTrench MOSFET | |
9 | FDD2670 |
Fairchild Semiconductor |
200V N-Channel PowerTrench MOSFET | |
10 | FDD2670 |
ON Semiconductor |
N-Channel MOSFET | |
11 | FDD26AN06A0 |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | FDD26AN06A0_F085 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |