FDD2570 - Fairchild Semiconductor

FDD2570 150V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at v.

Features

• 4.7 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability. D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parameter Ratings 150 ±20 (Note 1a) Units V V A W 4.7 30 70 3.2 1.3 -55 to +150 Maximum Power Dissipation @ TC = 25°C @ TA = 25°C @ TA = 25°C (Note 1) (Note 1a) (Note 1b) TJ, TS.