FDD13AN06A0 - Fairchild Semiconductor

FDD13AN06A0 N-Channel PowerTrench MOSFET

FDD13AN06A0 — N-Channel PowerTrench® MOSFET November 2013 FDD13AN06A0 N-Channel PowerTrench® MOSFET 60 V, 50 A, 13 mΩ Features • RDS(on) = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A • QG(tot) = 22 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Consumer Appliances • LED TV.

Features

• RDS(on) = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A
• QG(tot) = 22 nC ( Typ.) @ VGS = 10 V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse) Applications
• Consumer Appliances
• LED TV
• Synchronous Rectification
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies Formerly developmental type 82555 D G S D D-PAK G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 80oC, VGS = 10V) Continuous (TA = 25o.