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FDD10AN06A0 August 2002 FDD10AN06A0 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features • r DS(ON) = 9.4mΩ (Typ.), V GS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82560 Applications • Motor / Body Lo.
• r DS(ON) = 9.4mΩ (Typ.), V GS = 10V, ID = 50A
• Qg(tot) = 28nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82560
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN (FLANGE) GATE SOURCE
D
G S
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain.
FDD10AN06A0 - ON Semiconductor
MOSFET – N-Channel, POWERTRENCH) 60 V, 50 A, 10.5 mW FDD10AN06A0 Features • RDS(on) = 9.4 mW (Typ.), VGS = 10 V, ID = 5.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDD10AN06A0-F085 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 2 | FDD10AN06A0_F085 |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FDD107AN06LA0 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 4 | FDD10N20LZ |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDD12 |
ETC |
DC-DC CONVERTER |
|
| 6 | FDD120AN15A0 |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FDD120AN15A0 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 8 | FDD13AN06A0 |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FDD13AN06A0 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 10 | FDD14AN06LA0 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 11 | FDD14AN06LA0_F085 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 12 | FDD15 |
Chinfa Electronics Ind |
DC-DC CONVERTER |
|