FDD068AN03L - Fairchild Semiconductor

FDD068AN03L N-Channel MOSFET

FDD068AN03L / FDU068AN03L December 2003 FDD068AN03L / FDU068AN03L N-Channel PowerTrench® MOSFET 30V, 35A, 6.8mΩ Features • rDS(ON) = 5.7mΩ (Typ.), VGS = 4.5V, ID = 35A • Qg(5) = 24nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 12V Automotive Load Cont.

Features

• rDS(ON) = 5.7mΩ (Typ.), VGS = 4.5V, ID = 35A
• Qg(5) = 24nC (Typ.), VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101 Applications
• 12V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• ABS
• DC-DC Converters G S D I-PAK (TO-251AA) G D S G D D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 154oC, VGS = 10V) ID Continuous (TC < 150oC,.