FDC3616N - Fairchild Semiconductor

FDC3616N N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.7 A, 100 V. RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6.0 V • High performance .

Features

• 3.7 A, 100 V. RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6.0 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (23nC typical)
• High power and current handling capability
• Fast switching speed. Applications
• DC/DC converter
• Load Switching Bottom Drain G S S S SuperSOT-6 TM 1 S 6 5 4 2 3 S FLMP Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 100 ± 20 (Note 1a) Units V V A W °C.