These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applicatio.
• 1.0 A, 100 V.
RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V
• Low gate charge (3.7nC typical)
• Fast switching speed.
• High performance trench technology for extremely
low R DS(ON) .
• SuperSOTTM-6 package: small footprint 72%
(smaller than standard SO-8); low profile (1mm thick).
D2 S1 D1
4 5
G2
3 2 1
SuperSOT TM -6
S2 G1
6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
100 ±20
(Note 1a)
Units
V V A W
1.0 4.0 0.96 0.9 0.7 −55 to +150
Po.
These N−Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especiall.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDC3612 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDC3612 |
ON Semiconductor |
N-Channel MOSFET | |
3 | FDC3616N |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDC365P |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
5 | FDC3400 |
SMSC |
Floppy Disk Hard Sector Data Handler | |
6 | FDC3512 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDC3512 |
ON Semiconductor |
N-Channel MOSFET | |
8 | FDC3535 |
ON Semiconductor |
P-Channel MOSFET | |
9 | FDC3535 |
Fairchild Semiconductor |
P-Channel MOSFET | |
10 | FDC37B72X |
SMSC Corporation |
128 Pin Enhanced Super I/O Controller | |
11 | FDC37B77X |
SMSC Corporation |
ENHANCED SUPER I/O CONTROLLER | |
12 | FDC37B787 |
SMSC Corporation |
Super I/O Controller |