FDC2612 - Fairchild Semiconductor

FDC2612 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V • High performance trench technology for extrem.

Features

• 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching speed
• Low gate charge (8nC typical) Applications
• DC/DC converter D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 200 ± 20 (Note 1a) Units V V A W °C 1.1 4 1.6 0.8 −55 to +150 (Note 1a) (Note 1b) Operating a.