FDC2512 - Fairchild Semiconductor

FDC2512 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 1.4 A, 150 V. • • • • RDS(ON) = 425 mΩ @ VGS = 10 V RDS(ON) = 475 mΩ @ VGS = 6 V Applicatio.

Features

• 1.4 A, 150 V.
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• RDS(ON) = 425 mΩ @ VGS = 10 V RDS(ON) = 475 mΩ @ VGS = 6 V Applications
• DC/DC converter High performance trench technology for extremely low RDS(ON) Low gate charge (8nC typ) High power and current handling capability Fast switching speed D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 150 ± 20 (Note 1a) Units V V A W °C 1.4 8 1.6 0.8 −55 to +150 (Note 1.