SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequ.
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 105 mW
• Ultra Low Gate Charge (Typ. Qg = 46 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
www.onsemi.com
VDSS 650 V
RDS(ON) MAX 125 mW @ 10 V
ID MAX 24 A
D
G
S POWER MOSFET
GD S TO−220
CASE 340AT
MARKING DIAGRAM
$Y&Z&3&K FCP 125N65S3
© Semiconductor Components Industries, LLC, 2017
August, 2019 − Rev. 4
$Y &Z &3 &K FCP125N65S3
= ON Semiconductor Logo = Assembly Pl.
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FCP125N65S |
INCHANGE |
N-Channel MOSFET | |
2 | FCP125N65S3R0 |
ON Semiconductor |
N-Channel MOSFET | |
3 | FCP125N60E |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FCP125N60E |
INCHANGE |
N-Channel MOSFET | |
5 | FCP104N60 |
Fairchild Semiconductor |
MOSFET | |
6 | FCP104N60F |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FCP104N60F |
INCHANGE |
N-Channel MOSFET | |
8 | FCP110N65F |
Fairchild Semiconductor |
MOSFET | |
9 | FCP11N60 |
Fairchild Semiconductor |
SuperFET MOSFET | |
10 | FCP11N60F |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
11 | FCP11N60N |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | FCP11N60N |
INCHANGE |
N-Channel MOSFET |