FCP125N65S - INCHANGE

FCP125N65S N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM .

Features

·Static drain-source on-resistance: RDS(on) ≤2.3mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Be suitable for synchronous rectification for server and general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 24 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 181 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperat.