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The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET.
• RDS(on) = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A
• Ultra Low Gate Charge (Typ. Qg = 230 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 896 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedn.
FCH76N60NF - ON Semiconductor
The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a de.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FCH76N60N |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FCH023N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FCH040N65S3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | FCH040N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FCH041N60E |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FCH041N60E |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FCH041N60F |
ON Semiconductor |
N-Channel MOSFET |
|
| 8 | FCH041N60F |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 9 | FCH041N60F |
INCHANGE |
N-Channel MOSFET |
|
| 10 | FCH041N60F-F085 |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | FCH041N65EFLN4 |
ON Semiconductor |
N-Channel MOSFET |
|
| 12 | FCH041N65F |
Fairchild Semiconductor |
MOSFET |
|