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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS .
·With TO-247 packaging
·With low gate drive requirements
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
76 48.1
228
PD
Total Dissipation
595
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAM.
FCH041N60F - Fairchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utiliz.
FCH041N60F - ON Semiconductor
SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FCH041N60E |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FCH041N60E |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FCH041N60F-F085 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FCH041N65EFLN4 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FCH041N65F |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FCH041N65F |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FCH040N65S3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | FCH040N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FCH043N60 |
Fairchild Semiconductor |
MOSFET |
|
| 10 | FCH043N60 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | FCH043N60 |
ON Semiconductor |
N-Channel MOSFET |
|
| 12 | FCH023N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|