For DIP Ceramic Package Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Name GND AVE TPP VCC RST OE De0 De1 De2 De3 FPL Do3 Do2 Do1 Do0 GND ACKN PCLK TPE AVO Type GND Analog output Power Power Digital input Digital input Digital output Digital output Digital output Digital output GND Digital output Digital output Digital output Digital output G.
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Sensitive Layer Over a 0.8 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02" x 0.55" Image Array: 8 x 280 = 2240 pixels Pixel Pitch: 50 µm x 50 µm = 500 dpi Pixel Clock: up to 2 MHz Enabling up to 1780 Frames per Second Die Size: 1.7 x 17.3 mm Operating Voltage: 3V to 5.5V Naturally Protected Against ESD: > 16 kV Air Discharge Power Consumption: 20 mW at 3.3V, 1 MHz, 25°C Operating Temperature Range: 0°C to +70°C: C suffix Resistant to Abrasion: >1 Million Finger Sweeps Chip-On-Board (COB) package or 20-lead Ceramic DIP available for development, with Specific Protective La.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FCD4B14CC |
ATMEL Corporation |
Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output | |
2 | FCD4B14CCB |
ATMEL Corporation |
Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output | |
3 | FCD4N60 |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FCD1300N80Z |
Fairchild Semiconductor |
MOSFET | |
5 | FCD2250N80Z |
Fairchild Semiconductor |
MOSFET | |
6 | FCD2250N80Z |
INCHANGE |
N-Channel MOSFET | |
7 | FCD260N65S3 |
ON Semiconductor |
N-Channel MOSFET | |
8 | FCD260N65S3 |
INCHANGE |
N-Channel MOSFET | |
9 | FCD3400N80Z |
Fairchild Semiconductor |
MOSFET | |
10 | FCD360N65S3R0 |
ON Semiconductor |
N-Channel MOSFET | |
11 | FCD380N60E |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | FCD5N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |