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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 V ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 90 W TJ Max. Operating.
·Drain Current
–ID= 12A@ TC=25℃
·Drain Source Voltage-
: VDSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 260mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
650
V
±30
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Pluse
30
A
PD
Total Dissipation @TC=25℃
90
W
TJ
Max.
FCD260N65S3 - ON Semiconductor
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing cha.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FCD2250N80Z |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FCD2250N80Z |
INCHANGE |
N-Channel MOSFET |
|
| 3 | FCD1300N80Z |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FCD3400N80Z |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FCD360N65S3R0 |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FCD380N60E |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 7 | FCD4B14 |
ATMEL Corporation |
Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output |
|
| 8 | FCD4B14CC |
ATMEL Corporation |
Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output |
|
| 9 | FCD4B14CCB |
ATMEL Corporation |
Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output |
|
| 10 | FCD4N60 |
Fairchild Semiconductor |
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|
| 11 | FCD5N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 12 | FCD5N60_F085 |
Fairchild Semiconductor |
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|