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FCA76N60N - Fairchild Semiconductor

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FCA76N60N MOSFET

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET.

Features


• RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A
• Ultra Low Gate Charge (Typ. Qg = 218 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF)
• 100% Avalanche Tested
• RoHS Compliant Application
• Solar Inverter
• AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedne.

The same part from a different manufacturer

Datasheet FCA76N60N - ON Semiconductor FCA76N60N

The SupreMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a de.

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