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The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MO.
• RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A
• Ultra low gate charge ( Typ. Qg = 40.2nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, ser.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FCA16N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | FCA-125 |
Tyco Electronics |
25 AMPERES - SPDT |
|
| 3 | FCA-210 |
ETC |
Mid-Range Military/Aerospace Relays |
|
| 4 | FCA-325 |
ETC |
Mid-Range Military/Aerospace Relays |
|
| 5 | FCA20N60 |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FCA20N60 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 7 | FCA20N60F |
Fairchild Semiconductor |
N-CHANNEL FRFET MOSFET |
|
| 8 | FCA20N60S |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 9 | FCA20N60S_F109 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 10 | FCA22N60N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 11 | FCA35N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 12 | FCA36N60NF |
Fairchild Semiconductor |
N-Channel MOSFET |
|