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FCA36N60NF - Fairchild Semiconductor

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FCA36N60NF N-Channel MOSFET

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET.

Features


• RDS(on) = 80 mΩ (Typ.) @ VGS = 10V, ID = 18 A
• Ultra Low Gate Charge (Typ. Qg = 86 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 338 pF)
• 100% Avalanche Tested
• RoHS Compliant Application
• Solar Inverter
• AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness..

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