FC12 - Sanyo Semicon Device

FC12 NPN Transistor

Ordering number:EN3482 FC12 TR:NPN Epitaxial Plannar Silicon Transistor FET:N-Channel Junction Silicon Transistor High-Frequency Amp, AM Applications, Low-Frequency Amp Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC12 is formed with two chips, being equivalent t.

Features

· Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC12 is formed with two chips, being equivalent to the 2SC4639, placed in one package.
· Common drain and emitter. Package Dimensions unit:mm 2075 [FC12] Electrical Connection C:Collector G:Gate S:Source E/D:Emitter/Drain B:Base SANYO:CP5 Switching Time Test Circuit Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation [TR] Collector-to-Base Volta.