FC11 - Sanyo Semicon Device

FC11 N-channel FET

Ordering number:EN3154 FC11 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp Applications Features · Adoption of FBET process. · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC11 is formed with two chips, being equivalent to the 2SK771, pla.

Features

· Adoption of FBET process.
· Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC11 is formed with two chips, being equivalent to the 2SK771, placed in one package.
· Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp.
· Common source. Package Dimensions unit:mm 2070 [FC11] Electrical Connection G1:Gate1 G2:Gate2 D2:Drain2 SC:Source Common D1:Drain1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltag.