Ordering number:EN3080 FC112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=22kΩ, R2=22kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC112 is formed with two chips, being equivalent to the 2SC3396, placed .
· On-chip bias resistors (R1=22kΩ, R2=22kΩ)
· Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC112 is formed with two chips, being equivalent to the 2SC3396, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm 2066
[FC112]
Electrical Connection
C1:Collerctor1 C2:Collerctor2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FC11 |
Sanyo Semicon Device |
N-channel FET | |
2 | FC110 |
Sanyo Semicon Device |
NPN Transistor | |
3 | FC111 |
Sanyo Semicon Device |
PNP Transistor | |
4 | FC113 |
Sanyo Semicon Device |
PNP Transistor | |
5 | FC114 |
Sanyo Semicon Device |
NPN Transistor | |
6 | FC115 |
Sanyo Semicon Device |
PNP Transistor | |
7 | FC116 |
Sanyo Semicon Device |
NPN Transistor | |
8 | FC117 |
Sanyo Semicon Device |
PNP Transistor | |
9 | FC118 |
Sanyo Semicon Device |
NPN Transistor | |
10 | FC119 |
Sanyo Semicon Device |
NPN Transistor | |
11 | FC1005 |
Vishay |
High Frequency Resistor | |
12 | FC100A |
Agere Systems |
Power Modules / DC-DC Converters |