F8N25 - ROUM

F8N25 8A 250V N-channel Enhancement Mode Power MOSFET

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 250V RDS(on) （TYP)= 0.4Ω ID = 8A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤0.47Ω) ● Low Gate Charge(Typical Data:12nC.

Features

● Fast Switching
● Low ON Resistance(Rdson≤0.47Ω)
● Low Gate Charge(Typical Data:12nC)
● Low Reverse Transfer Capacitances(Typical:7pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Automotive,DC Motor Control and Class D Amplifier TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 8N25/I8N25/E8N25 /B8N25/D8N25 Drian-Source Voltage VDS 250 Gate-Drain Voltage .