F8N25 |
Part Number | F8N25 |
Manufacturer | ROUM |
Description | These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords wi... |
Features |
● Fast Switching ● Low ON Resistance(Rdson≤0.47Ω) ● Low Gate Charge(Typical Data:12nC) ● Low Reverse Transfer Capacitances(Typical:7pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● Used in various power switching circuit for system miniaturization and higher efficiency. ● Automotive,DC Motor Control and Class D Amplifier TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 8N25/I8N25/E8N25 /B8N25/D8N25 Drian-Source Voltage VDS 250 Gate-Drain Voltage ... |
Document |
F8N25 Data Sheet
PDF 1.42MB |
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